Patents – Semiwise

Patents

Semiwise Patents

6 patents all developed by Prof. A Asenov and assigned to Semiwise.
Based on simulations with the Synopsys TCAD-to_SPICEtools with unmatched capabilities for predicting performance on variability.
Reflect acute knowledge of the technology developed by key semiconductor technology providers.
Excellent patent quality:Drafting by Nif/T technology experts and prosecuted by Blakely Sokoloff Taylor & ZafmanLLP.

CMOS IP: Patent List

Reduced local threshold voltage variation MOSFET using multiple layers of epi for improved device operation. Patent number: 11049939

Filed: August 2, 2016
Date of Patent: June 29, 2021
Assignee: SemiWise Limited
Inventor: Asen Asenov

2.Fluctuation resistant FinFET: Patent number: 9847404

Filed: September 11, 2013
Date of Patent: December 19, 2017
Assignees: SemiWise Limited, Semi Solutions LLC
Inventors: Robert J. Strain, Asen Asenov

3. Method of manufacturing variation resistant metal-oxide-semiconductor field effect transistor (MOSFET): Patent number: 9373684

Filed: March 20, 2012
Date of Patent: June 21, 2016
Assignee: SemiWise Limited
Inventors: Asen Asenov, Gareth Roy

4. Fluctuation resistant low access resistance fully depleted SOI transistor with improved channel thickness control and reduced access resistance: Patent number: 9263568

Filed: July 25, 2013
Date of Patent: February 16, 2016
Assignee: SemiWise Limited
Inventor: Asen Asenov

5. Gate recessed FDSOI transistor with sandwich of active and etch control layer: Patent number: 9269804

Filed: July 25, 2013
Date of Patent: February 23, 2016
Assignee: SemiWise Limited
Inventor: Asen Asenov

6. Manufacture of a variation resistant metal-oxide-semiconductor field effect transistor (MOSFET): Patent number: 9312362

Filed: March 20, 2015
Date of Patent: April 12, 2016
Assignee: SemiWise Limited
Inventors: Asen Asenov, Gareth Roy

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