Module 7: TCAD-Based Process Integration and Optimisation 4 Lectures

Aims

This module aims to provide students with an in-depth understanding of using Technology Computer-Aided Design (TCAD) tools for process integration and optimisation of power semiconductor devices. The focus will be on Si and SiC power diodes, MOSFETs, and IGBTs, including edge termination techniques essential for high-voltage applications

Objectives

By the end of this module, students will be able to:

1. Understand the fundamentals of TCAD-based process and device simulations.

2. Develop and optimise process flows for Si and SiC power diodes, MOSFETs, and IGBTs.

3. Investigate the impact of process parameters on device performance.

4. Design and simulate edge termination structures for high-voltage devices.

5. Evaluate the effects of fabrication variations on power device characteristics.

Syllabus

Lecture 1: Introduction to TCAD for Power Devices

· Overview of TCAD tools and process/device simulation workflows.

· Key steps in process integration: implantation, diffusion, oxidation, etching, deposition.

Lecture 2 & 3: Process Integration of Si and SiC Power Devices

· TCAD-based process flow development for:

  • Si and SiC power diodes (PiN, Schottky).
  • MOSFETs (Si and SiC).
  • IGBTs.

· Impact of doping, defect density, and annealing on device performance.

· Process variations and their influence on Rds,on_{ds,on}ds,on and breakdown voltage.

Lecture 4: Edge Termination Techniques for High-Voltage Devices

· Role of edge termination in breakdown voltage enhancement.

· Techniques: Field plates, Junction Termination Extension (JTE), Deep Trench Termination.

· TCAD simulation of different edge termination designs and optimisation strategies.

· Case studies on optimising SiC MOSFETs and IGBTs for high efficiency.

· Future trends in process integration for power electronics

TCAD Laboratory

The TCAD laboratory for power semiconductor devices aims to provide students with hands-on experience in simulating and analyzing the behavior of different power devices, including traditional silicon-based devices (e.g., MOSFETs, IGBTs) as well as next-generation wide bandgap materials (SiC, GaN). The objective is to enable students to understand the device physics behind power semiconductors and to compare the performance of silicon and wide bandgap devices under various conditions using TCAD simulation tools. 

Key Learning Outcomes 

  1. Develop a deep understanding of the operational principles of power devices such as MOSFETs, diodes, and IGBTs through simulation. 
  1. Simulate and analyze the performance of Si-based and wide bandgap (SiC, GaN) power devices. 
  1. Explore the effects of device architecture and material properties on parameters like breakdown voltage, switching speed, and thermal management. 
  1. Compare the performance of silicon-based and wide bandgap devices in high-power and high-frequency applications. 
  1. Use TCAD tools to optimize power device design for specific applications, such as energy efficiency and switching performance. 

Experiments to Conduct 

  • Silicon Power MOSFET Simulation: Simulate the IV characteristics, threshold voltage, and switching behavior of a silicon MOSFET. 
  • SiC MOSFET Simulation: Model the performance of a SiC MOSFET and compare its efficiency. 
  • IGBT Simulation: Simulate the turn-on and turn-off characteristics of an IGBT and analyze its use in high-voltage applications. 
  • Schottky Diode Simulation: Simulate a SiC Schottky diode and compare its characteristics to a silicon PN diode. 
  • GaN HEMT Simulation: Investigate the high-frequency performance of a GaN-based HEMT and explore its advantages over traditional silicon power devices. 
  • Device Comparison Study: Simulate and compare the performance of Si, SiC, and GaN power devices in terms of breakdown voltage, switching speed, and thermal management under different operational conditions. 
  • Instructor : Prof Assen Asenov
  • Duration : 5 Hours
  • Language : English
  • Certificate : Yes
  • Access : Lifetime
Add to Cart

Module 7: TCAD-Based Process Integration and Optimisation

  • Instructor : Prof Assen Asenov
  • Duration : 5 Hours
  • Language : English
  • Certificate : Yes
  • Access : Lifetime
Add to Cart

Aims

This module aims to provide students with an in-depth understanding of using Technology Computer-Aided Design (TCAD) tools for process integration and optimisation of power semiconductor devices. The focus will be on Si and SiC power diodes, MOSFETs, and IGBTs, including edge termination techniques essential for high-voltage applications

Objectives

By the end of this module, students will be able to:

1. Understand the fundamentals of TCAD-based process and device simulations.

2. Develop and optimise process flows for Si and SiC power diodes, MOSFETs, and IGBTs.

3. Investigate the impact of process parameters on device performance.

4. Design and simulate edge termination structures for high-voltage devices.

5. Evaluate the effects of fabrication variations on power device characteristics.

Syllabus

  1. Lecture 1: Introduction to TCAD for Power Devices

    · Overview of TCAD tools and process/device simulation workflows.

    · Key steps in process integration: implantation, diffusion, oxidation, etching, deposition.

    Lecture 2 & 3: Process Integration of Si and SiC Power Devices

    · TCAD-based process flow development for:

    • Si and SiC power diodes (PiN, Schottky).
    • MOSFETs (Si and SiC).
    • IGBTs.

    · Impact of doping, defect density, and annealing on device performance.

    · Process variations and their influence on Rds,on_{ds,on}ds,on and breakdown voltage.

    Lecture 4: Edge Termination Techniques for High-Voltage Devices

    · Role of edge termination in breakdown voltage enhancement.

    · Techniques: Field plates, Junction Termination Extension (JTE), Deep Trench Termination.

    · TCAD simulation of different edge termination designs and optimisation strategies.

    · Case studies on optimising SiC MOSFETs and IGBTs for high efficiency.

    · Future trends in process integration for power electronics

TCAD Laboratory

The TCAD laboratory for power semiconductor devices aims to provide students with hands-on experience in simulating and analyzing the behavior of different power devices, including traditional silicon-based devices (e.g., MOSFETs, IGBTs) as well as next-generation wide bandgap materials (SiC, GaN). The objective is to enable students to understand the device physics behind power semiconductors and to compare the performance of silicon and wide bandgap devices under various conditions using TCAD simulation tools. 

Key Learning Outcomes 

  1. Develop a deep understanding of the operational principles of power devices such as MOSFETs, diodes, and IGBTs through simulation. 
  1. Simulate and analyze the performance of Si-based and wide bandgap (SiC, GaN) power devices. 
  1. Explore the effects of device architecture and material properties on parameters like breakdown voltage, switching speed, and thermal management. 
  1. Compare the performance of silicon-based and wide bandgap devices in high-power and high-frequency applications. 
  1. Use TCAD tools to optimize power device design for specific applications, such as energy efficiency and switching performance. 

Experiments to Conduct 

  • Silicon Power MOSFET Simulation: Simulate the IV characteristics, threshold voltage, and switching behavior of a silicon MOSFET. 
  • SiC MOSFET Simulation: Model the performance of a SiC MOSFET and compare its efficiency. 
  • IGBT Simulation: Simulate the turn-on and turn-off characteristics of an IGBT and analyze its use in high-voltage applications. 
  • Schottky Diode Simulation: Simulate a SiC Schottky diode and compare its characteristics to a silicon PN diode. 
  • GaN HEMT Simulation: Investigate the high-frequency performance of a GaN-based HEMT and explore its advantages over traditional silicon power devices. 
  • Device Comparison Study: Simulate and compare the performance of Si, SiC, and GaN power devices in terms of breakdown voltage, switching speed, and thermal management under different operational conditions. 

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