Module 8: Design-Technology Co-Optimization (DTCO) for Power Electronic Devices (PED), 4 Lectures

Aims

This module aims to provide a comprehensive understanding of Design-Technology Co-Optimization (DTCO) for power electronic devices. It will cover the DTCO workflow, compact modeling techniques, table lookup models, gate drive circuit considerations, and the impact of packaging on power device performance. Applications in converters and inverters will be discussed.

Objectives

By the end of this module, students will be able to:

1. Understand the DTCO methodology and its importance in power electronics.

2. Develop compact models and table lookup models for power devices.

3. Analyse the interaction between device characteristics and gate drive circuits.

4. Evaluate the impact of packaging on electrical and thermal performance.

5. Apply DTCO concepts to optimise converters and inverters

Syllabus

Lecture 1: DTCO Flow in Power Electronic Devices

· Definition and importance of DTCO in power electronics.

· Interplay between technology scaling, device architecture, and circuit performance.

· DTCO methodology for Si, SiC, and GaN-based power devices.

Lecture 2: Compact Models and Table Lookup Models

· Compact modeling approaches for power devices (MOSFETs, IGBTs).

· Table lookup models for circuit-level simulations.

· Parameter extraction from TCAD and experimental data for SPICE simulations.

Lecture 3: Gate Drive Circuits and Packaging Considerations

· Gate drive requirements for MOSFETs and IGBTs.

· Impact of gate resistance, Miller effect, and switching dynamics.

· Packaging influence on parasitics, thermal management, and EMI.

Lecture 4: DTCO Applications in Converters and Inverters

· DTCO-driven optimisation for power converters and inverters.

· Case studies on SiC-based inverters and high-efficiency power modules

TCAD Laboratory

The TCAD laboratory for power semiconductor devices aims to provide students with hands-on experience in simulating and analyzing the behavior of different power devices, including traditional silicon-based devices (e.g., MOSFETs, IGBTs) as well as next-generation wide bandgap materials (SiC, GaN). The objective is to enable students to understand the device physics behind power semiconductors and to compare the performance of silicon and wide bandgap devices under various conditions using TCAD simulation tools. 

Key Learning Outcomes 

  1. Develop a deep understanding of the operational principles of power devices such as MOSFETs, diodes, and IGBTs through simulation. 
  1. Simulate and analyze the performance of Si-based and wide bandgap (SiC, GaN) power devices. 
  1. Explore the effects of device architecture and material properties on parameters like breakdown voltage, switching speed, and thermal management. 
  1. Compare the performance of silicon-based and wide bandgap devices in high-power and high-frequency applications. 
  1. Use TCAD tools to optimize power device design for specific applications, such as energy efficiency and switching performance. 

Experiments to Conduct 

  • Silicon Power MOSFET Simulation: Simulate the IV characteristics, threshold voltage, and switching behavior of a silicon MOSFET. 
  • SiC MOSFET Simulation: Model the performance of a SiC MOSFET and compare its efficiency. 
  • IGBT Simulation: Simulate the turn-on and turn-off characteristics of an IGBT and analyze its use in high-voltage applications. 
  • Schottky Diode Simulation: Simulate a SiC Schottky diode and compare its characteristics to a silicon PN diode. 
  • GaN HEMT Simulation: Investigate the high-frequency performance of a GaN-based HEMT and explore its advantages over traditional silicon power devices. 
  • Device Comparison Study: Simulate and compare the performance of Si, SiC, and GaN power devices in terms of breakdown voltage, switching speed, and thermal management under different operational conditions. 
  • Instructor : Prof Assen Asenov
  • Duration : 5 Hours
  • Language : English
  • Certificate : Yes
  • Access : Lifetime
Add to Cart

Module 7: TCAD-Based Process Integration and Optimisation

  • Instructor : Prof Assen Asenov
  • Duration : 5 Hours
  • Language : English
  • Certificate : Yes
  • Access : Lifetime
Add to Cart

Aims

This module aims to provide a comprehensive understanding of Design-Technology Co-Optimization (DTCO) for power electronic devices. It will cover the DTCO workflow, compact modeling techniques, table lookup models, gate drive circuit considerations, and the impact of packaging on power device performance. Applications in converters and inverters will be discussed.

Objectives

By the end of this module, students will be able to:

1. Understand the DTCO methodology and its importance in power electronics.

2. Develop compact models and table lookup models for power devices.

3. Analyse the interaction between device characteristics and gate drive circuits.

4. Evaluate the impact of packaging on electrical and thermal performance.

5. Apply DTCO concepts to optimise converters and inverters.

Syllabus

  1. Lecture 1: DTCO Flow in Power Electronic Devices

    · Definition and importance of DTCO in power electronics.

    · Interplay between technology scaling, device architecture, and circuit performance.

    · DTCO methodology for Si, SiC, and GaN-based power devices.

    Lecture 2: Compact Models and Table Lookup Models

    · Compact modeling approaches for power devices (MOSFETs, IGBTs).

    · Table lookup models for circuit-level simulations.

    · Parameter extraction from TCAD and experimental data for SPICE simulations.

    Lecture 3: Gate Drive Circuits and Packaging Considerations

    · Gate drive requirements for MOSFETs and IGBTs.

    · Impact of gate resistance, Miller effect, and switching dynamics.

    · Packaging influence on parasitics, thermal management, and EMI.

    Lecture 4: DTCO Applications in Converters and Inverters

    · DTCO-driven optimisation for power converters and inverters.

    · Case studies on SiC-based inverters and high-efficiency power modules

TCAD Laboratory

The TCAD laboratory for power semiconductor devices aims to provide students with hands-on experience in simulating and analyzing the behavior of different power devices, including traditional silicon-based devices (e.g., MOSFETs, IGBTs) as well as next-generation wide bandgap materials (SiC, GaN). The objective is to enable students to understand the device physics behind power semiconductors and to compare the performance of silicon and wide bandgap devices under various conditions using TCAD simulation tools. 

Key Learning Outcomes 

  1. Develop a deep understanding of the operational principles of power devices such as MOSFETs, diodes, and IGBTs through simulation. 
  1. Simulate and analyze the performance of Si-based and wide bandgap (SiC, GaN) power devices. 
  1. Explore the effects of device architecture and material properties on parameters like breakdown voltage, switching speed, and thermal management. 
  1. Compare the performance of silicon-based and wide bandgap devices in high-power and high-frequency applications. 
  1. Use TCAD tools to optimize power device design for specific applications, such as energy efficiency and switching performance. 

Experiments to Conduct 

  • Silicon Power MOSFET Simulation: Simulate the IV characteristics, threshold voltage, and switching behavior of a silicon MOSFET. 
  • SiC MOSFET Simulation: Model the performance of a SiC MOSFET and compare its efficiency. 
  • IGBT Simulation: Simulate the turn-on and turn-off characteristics of an IGBT and analyze its use in high-voltage applications. 
  • Schottky Diode Simulation: Simulate a SiC Schottky diode and compare its characteristics to a silicon PN diode. 
  • GaN HEMT Simulation: Investigate the high-frequency performance of a GaN-based HEMT and explore its advantages over traditional silicon power devices. 
  • Device Comparison Study: Simulate and compare the performance of Si, SiC, and GaN power devices in terms of breakdown voltage, switching speed, and thermal management under different operational conditions. 

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