Channel Last Transistor Technology
A) Bulk MOSFET
- High channel doping
- Low mobility and performance
- High variability and leakage
Epitaxial channel MOSFET
- Advanced by Suvolta
- Back diffusion in the epitaxial layer
Improved variability
- No back diffusion
- Very low channel doping
- High mobility and performance
- Low variability and leakage
SemiwiseFlat Field Transistor (FFT)
- Better electrostatic integrity allows low channel doping
- High mobility and performance
- Low statistical variability and noise
- Very low leakage
FFT advantages compared to Bulk MOSFET
Improved Performance
- > 27% at high VD
- > 65% at low  VD
- > 35% at effective drive current
Improved variability
- 60% reduction in statistical variability
- Improved reliability
- Order of magnitude noise reduction
Reduced Leakage
- ~ 2 orders of magnitude
- ~ lower band-to-band tunneling